? 2013 ixys corporation, all rights reserved ixyp30n120c3 IXYH30N120C3 v ces = 1200v i c110 = 30a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.3v t fi(typ) = 88ns ds100385d(9/13) high-speed igbt for 20-50 khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 1200 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 750 a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 3.3 v t j = 150 ? c 3.7 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1200 v v cgr t j = 25c to 175c, r ge = 1m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 75 a i c110 t c = 110c 30 a i cm t c = 25c, 1ms 145 a i a t c = 25c 20 a e as t c = 25c 400 mj ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 60 a (rbsoa) clamped inductive load v ce ? v ces p c t c = 25c 500 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight to-220 3 g to-247 6 g 1200v xpt tm genx3 tm igbts features ? high voltage package ? optimized for low switching losses ? square rbsoa ? positive thermal coefficient of vce(sat) ? avalanche rated ? international standard packages advantages ? high power density ? low gate drive requirement applications ? high frequency power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts g = gate c = collector e = emitter tab = collector to-220 (ixyp) tab g c e to-247 ad (ixyh) g c e tab
ixys reserves the right to change limits, test conditions, and dimensions. ixyp30n120c3 IXYH30N120C3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 10 17 s c ie s 1640 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 110 pf c res 38 pf q g(on) 69 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 9 nc q gc 34 nc t d(on) 19 ns t ri 40 ns e on 2.6 mj t d(off) 130 ns t fi 88 ns e of f 1.1 mj t d(on) 19 ns t ri 52 ns e on 6.0 mj t d(off) 156 ns t fi 140 ns e off 1.6 mj r thjc 0.30 c/w r thcs to-220 0.50 c/w r thcs to-247 0.21 c/w inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 inductive load, t j = 150c i c = 30a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ?? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc pins: 1 - gate 2 - collector 3 - emitter to-220 outline
? 2013 ixys corporation, all rights reserved ixyp30n120c3 IXYH30N120C3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 7v 8v 6v 9v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 14v 11v 12v 7v 6v 9v 13v 8v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 01234567 v ce - volts i c - amperes 8v 7v 6v 5v 9v v ge = 15v 13v 12v 11v 10v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 30a i c = 15a i c = 60a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 7 8 9 101112131415 v ge - volts v ce - volts i c = 60a t j = 25oc 30a 15a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 4567891011 v ge - volts i c - amperes t j = - 40oc 25oc 150oc
ixys reserves the right to change limits, test conditions, and dimensions. ixyp30n120c3 IXYH30N120C3 fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 7. transconductance 0 5 10 15 20 25 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 200 300 400 500 600 700 800 900 1000 1100 1200 1300 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10203040506070 q g - nanocoulombs v ge - volts v ce = 600v i c = 30a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res
? 2013 ixys corporation, all rights reserved ixyp30n120c3 IXYH30N120C3 fig. 12. inductive switching energy loss vs. gate resistance 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 0 3 6 9 12 15 18 21 24 27 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 600v i c = 30a i c = 60a fig. 15. inductive turn-off switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 200 220 15 20 25 30 35 40 45 50 55 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 400 450 500 550 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 60a i c = 30a fig. 13. inductive switching energy loss vs. collector current 0.5 1.0 1.5 2.0 2.5 3.0 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0 4 8 12 16 20 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 4 8 12 16 20 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 30a i c = 60a fig. 16. inductive turn-off switching times vs. collector current 20 40 60 80 100 120 140 160 180 200 220 15 20 25 30 35 40 45 50 55 60 i c - amperes t f i - nanoseconds 60 80 100 120 140 160 180 200 220 240 260 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 100 110 120 130 140 150 160 170 180 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 60a i c = 30a
ixys reserves the right to change limits, test conditions, and dimensions. ixyp30n120c3 IXYH30N120C3 ixys ref: ixy_30n120c3(4n-c91) 9-04-13 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 200 15 20 25 30 35 40 45 50 55 60 i c - amperes t r i - nanosecond s 10 12 14 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 40 80 120 160 200 240 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 16 18 20 22 24 26 28 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 60a i c = 30a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 320 10 15 20 25 30 35 40 45 50 55 r g - ohms t r i - nanosecond s 0 10 20 30 40 50 60 70 80 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 30a i c = 60a fig. 21. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 90 100 1.0 10.0 100.0 1,000.0 f max - kilohertzs i c - amperes t j = 150oc t c = 75oc v ce = 600v v ge = 15v r g = 10 ? d = 0.5 square wave triangular wave
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